Report Outlook

The rapid growth of electric vehicles, wind power green energy, and 5G markets has been facilitated by the advent of third-generation semiconductors that can withstand higher power, operate at higher frequencies and have excellent heat dissipation properties.

Third-generation semiconductors use materials such as gallium nitride (GaN) and silicon carbide (SiC), which are known for their characteristics of wide bandgap, high power density, high breakdown voltage, high cutoff frequency and high electron mobility making them suitable for high frequency communications and high-power electronic circuits. In addition, their high electron conversion efficiency also brings energy-saving advantages.